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Point Defects in Semiconductors I: Theoretical Aspects (Softcover Reprint of the Original 1st 1981)

Point Defects in Semiconductors I

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"Point Defects in Semiconductors I" by M. Lannoo is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

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Best For: Researchers and students in semiconductor physics and materials science
Focus: Theoretical analysis of point defects in semiconductor materials
Covers: Electronic structure and energy bands in covalent crystals with weak coupling to atomic vibrations
Why It Matters: Understanding point defects is essential for predicting and controlling the electronic properties of semiconductors

"Point Defects in Semiconductors I" by M. Lannoo is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

Topic: Devices & Sensors

Author: M. Lannoo

Who this is for:

  • Physics students
  • Science-minded readers
  • Readers building technical understanding

Why this book matters: It provides structured coverage of physics concepts in a way that supports deeper understanding and continued study.

From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

AuthorM. Lannoo
PublisherSpringer
Published2012-01-10
ISBN-139783642815768
BindingPaperback
LanguageEnglish
SubjectsScience
TopicDevices & Sensors
SeriesSpringer Solid-State Sciences

Format: Paperback

Language: English

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