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Thin Film Growth Techniques for Low-Dimensional Structures (Softcover Reprint of the Original 1st 1987)

Thin Film Growth Techniques for Low-Dimensional Structures

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"Thin Film Growth Techniques for Low-Dimensional Structures" by R.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

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Best For: Researchers and engineers working on semiconductor and metal thin films
Focus: Techniques for growth and characterization of thin semiconductor and metal layers
Covers: Recent advances in deposition methods for low-dimensional structures
Why It Matters: Understanding thin film growth is essential for designing new materials with ultrathin layers in electronics and physics applications

"Thin Film Growth Techniques for Low-Dimensional Structures" by R.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

Topic: Devices & Sensors

Author: R.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott

Who this is for:

  • Physics students
  • Science-minded readers
  • Readers building technical understanding

Why this book matters: It provides structured coverage of physics concepts in a way that supports deeper understanding and continued study.

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

AuthorR.F.C. Farrow, S.S.P. Parkin, P.J. Dobson, J.H. Neave, A.S. Arrott
PublisherSpringer
Published2012-12-28
ISBN-139781468491470
BindingPaperback
Pages552
LanguageEnglish
SubjectsTechnology & Engineering
TopicDevices & Sensors
SeriesNATO Science Series B:

Format: Paperback

Length: 552 pages

Language: English

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