Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
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"Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications" by Jacopo Franco, Ben Kaczer, Guido Groeseneken is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
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"Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications" by Jacopo Franco, Ben Kaczer, Guido Groeseneken is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.
Topic: Devices & Sensors
Author: Jacopo Franco, Ben Kaczer, Guido Groeseneken
Who this is for:
- Physics students
- Science-minded readers
- Readers building technical understanding
Why this book matters: It provides structured coverage of physics concepts in a way that supports deeper understanding and continued study.
This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
| Author | Jacopo Franco, Ben Kaczer, Guido Groeseneken |
| Publisher | Springer |
| Published | 2013-10-29 |
| ISBN-13 | 9789400776623 |
| Binding | Hardcover |
| Pages | 187 |
| Language | English |
| Subjects | Technology & Engineering |
| Topic | Devices & Sensors |
| Series | Springer Advanced Microelectronics |
Format: Hardcover
Length: 187 pages
Language: English
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