Ion Implantation: Basics to Device Fabrication
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"Ion Implantation: Basics to Device Fabrication" by Emanuele Rimini is a astronomy book and space science reference focused on Cosmology. Best for students, researchers, and serious astronomy enthusiasts.
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
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"Ion Implantation: Basics to Device Fabrication" by Emanuele Rimini is a astronomy book and space science reference focused on Cosmology. Best for students, researchers, and serious astronomy enthusiasts.
Topic: Cosmology
Author: Emanuele Rimini
Who this is for:
- Astronomy students
- Researchers and advanced hobbyists
- Readers exploring space science topics
Why this book matters: It matters because it helps readers build a stronger understanding of astronomy concepts, observations, and scientific ideas related to space.
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
| Author | Emanuele Rimini |
| Publisher | Springer |
| Published | 2014-02-23 |
| ISBN-13 | 9781461359524 |
| Binding | Paperback |
| Pages | 393 |
| Language | English |
| Subjects | Technology & Engineering |
| Topic | Cosmology |
| Series | The Springer International Engineering and Computer Science |
Format: Paperback
Length: 393 pages
Language: English
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