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Hot-Carrier Effects in Mos Devices

Hot-Carrier Effects in MOS Devices

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"Hot-Carrier Effects in MOS Devices" by Eiji Takeda, Cary Y. Yang, Cary Y.-W. Yang, Akemi Miura-Hamada is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

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Best For: Researchers and engineers working with ultrafast, ultrasmall integrated circuits and semiconductor devices.
Focus: The study and implications of hot-carrier effects in MOS devices relevant to manufacturing and technological applications.
Covers: Fundamental principles and practical considerations of hot-carrier effects in MOS devices, based on prior Japanese work by Dr. Takeda.
Why It Matters: Understanding hot-carrier effects is critical as these phenomena increasingly impact the performance and reliability of modern integrated circuits moving from research to real-world applications.

"Hot-Carrier Effects in MOS Devices" by Eiji Takeda, Cary Y. Yang, Cary Y.-W. Yang, Akemi Miura-Hamada is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.

Topic: Devices & Sensors

Author: Eiji Takeda, Cary Y. Yang, Cary Y.-W. Yang, Akemi Miura-Hamada

Who this is for:

  • Physics students
  • Science-minded readers
  • Readers building technical understanding

Why this book matters: It provides structured coverage of physics concepts in a way that supports deeper understanding and continued study.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

AuthorEiji Takeda, Cary Y. Yang, Cary Y.-W. Yang, Akemi Miura-Hamada
PublisherAcademic Press
Published1995
ISBN-139780126822403
BindingHardcover
Pages329
LanguageEnglish
SubjectsJuvenile Nonfiction
TopicDevices & Sensors

Format: Hardcover

Length: 329 pages

Language: English

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