Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Name: Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals
Brand: Wspc (Europe)
SKU: 1-99-537-000140
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"Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals" by Oleg Velichko is a mathematics book and learning resource focused on Devices & Sensors. Best for teachers, students, and readers looking for stronger mathematical understanding.

Comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with surface or interfaces is formulated in this book. A set of generalized equations that describe diffusion of impurity atoms and point defects has the form suitable for numerical solution. Based on this theory, partial diffusion models are constructed, and simulation of many doping processes used in microelectronics is carried out.

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Best For: Researchers and engineers working on microelectronics and semiconductor fabrication

Focus: Theoretical and numerical modeling of atomic diffusion in silicon crystals under nonequilibrium conditions

Covers: Generalized equations for impurity atom and point defect diffusion, partial diffusion models, and simulations of doping processes

Why It Matters: Provides a detailed theoretical framework and practical simulation tools for understanding and controlling doping in silicon, which is critical for semiconductor device manufacturing

"Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals" by Oleg Velichko is a mathematics book and learning resource focused on Devices & Sensors. Best for teachers, students, and readers looking for stronger mathematical understanding.

Topic: Devices & Sensors

Author: Oleg Velichko

Who this is for:

Teachers and classroom instructors
Students building subject mastery
Readers looking for practical learning support

Why this book matters: It stands out as a practical math resource that helps explain concepts, strengthen problem-solving, and support classroom or independent learning.

Comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with surface or interfaces is formulated in this book. A set of generalized equations that describe diffusion of impurity atoms and point defects has the form suitable for numerical solution. Based on this theory, partial diffusion models are constructed, and simulation of many doping processes used in microelectronics is carried out.