Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties
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"Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties" by Bentarzi, Hamid is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.
Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides.Materials + Care
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"Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties" by Bentarzi, Hamid is a physics book focused on Devices & Sensors. Best for students, educators, and scientifically curious readers.
Topic: Devices & Sensors
Author: Bentarzi, Hamid
Who this is for:
- Physics students
- Science-minded readers
- Readers building technical understanding
Why this book matters: It provides structured coverage of physics concepts in a way that supports deeper understanding and continued study.
Reviewing the state-of-the-art in the field, this volume describes the importance of mobile ions presented in oxide structures. The text defines the MOS structure, and provides an overview of onic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides.| Author | Bentarzi, Hamid |
| Publisher | Springer |
| Published | 2011-01-16 |
| ISBN-13 | 9783642163036 |
| Binding | Hardcover |
| Subjects | Technology & Engineering | Materials Science | Electronic Materials ; Science | Physics | Condensed Matter ; Technology & Engineering | Electronics | Semiconductors ; Science | Physics | Electricity |
| Topic | Devices & Sensors |
| Series | Engineering Materials |
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Format: Hardcover
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